Matthieu received the bachelor and M.S. degrees in Applied Physics and Engineering from Grenoble INP Phelma, respectively in 2007 and 2009, with master thesis on an infrared metamaterial. He then pursued a PhD program in co-direction between CEA-LETI (Dr. Thomas Ernst) and EPFL (Dr. Adrian Ionescu) in micro-nano electronics, studying, fabricating and characterizing a novel device concept, the junctionless nanowire transistor. He joined IEMN as a post-doctoral researcher in June of 2014, in the frame of the LEAF EQUIPEX project. Currently his research focuses on nano- and femto-second laser ablation, mainly for the purposes of integration of circuits on flexible substrates.
LEAF, Laser procEssing plAtform for multiFunctional electronics on Flex, Investissement d’Avenir ANR-11-EQPX-0025
- M. Berthomé et al., “Physically-based, multi-architecture, analytical model for junctionless transistors,” in Ulis 2011 Ultimate Integration on Silicon, 2011, pp. 1–4.
- S. Barraud, M. Berthomé et al., “Scaling of Trigate Junctionless Nanowire MOSFET with Gate Length Down to 13nm,” Electron Device Letters, IEEE, 2012.
- M. A. Escobar, M. Berthomé et al., “Focusing surface waves with an inhomogeneous metamaterial lens,” Applied Optics, vol. 49, no. 7, p. A18, Nov. 2009.
- M. Najmzadeh, J.-M. Sallese, M. Berthomé, W. Grabinski, and A. M. Ionescu, “Local Volume Depletion/Accumulation in GAA Si Nanowire Junctionless nMOSFETs,” IEEE Transactions on Electron Devices, vol. 59, no. 12, pp. 3519–3526, Dec. 2012.
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